Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas. 2000.
Metal-induced gap states — In bulk semiconductor band structure calculations, it is assumed that the crystal lattice (which features a periodic potential due to the atomic structure) of the material is infinite. When the finite size of a crystal is taken into account, the… … Wikipedia
structure métal-semi-conducteur-métal — metalo puslaidininkio metalo darinys statusas T sritis radioelektronika atitikmenys: angl. metal semiconductor metal structure vok. Metall Halbleiter Metall Struktur, f rus. структура металл полупроводник металл, f pranc. structure métal semi… … Radioelektronikos terminų žodynas
Semiconductor device — Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most … Wikipedia
Metal–insulator transition — Metal insulator transitions are transitions from a metal (material with good electrical conductivity of electric charges) to an insulator (material where conductivity of charges is quickly suppressed). These transitions can be achieved by tuning… … Wikipedia
Metal-induced crystallization — (MIC) is a method by which amorphous silicon, or a Si, can be turned into polycrystalline silicon at relatively low temperatures. In MIC an amorphous Si film is deposited onto a substrate, usually glass or Si, and then capped with a metal, such… … Wikipedia
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
Semiconductor — Citations missing|date=March 2008A semiconductor is a solid material that has electrical conductivity in between a conductor and an insulator; it can vary over that wide range either permanently or dynamically. [. They are used in many… … Wikipedia
Metal oxide adhesion — The strength of metal oxide adhesion effectively determines the wetting of the metal oxide interface. The strength of this adhesion is important, for instance, in production of light bulbs and fiber matrix composites that depend on the… … Wikipedia
metal-alumina-oxide-semiconductor structure — metalo aliuminio ir silicio oksidų puslaidininkio darinys statusas T sritis radioelektronika atitikmenys: angl. metal alumina oxide semiconductor structure vok. Metall Al₂O₃ SiO₂ Struktur, f; Metall Aluminiumoxid und Siliziumoxid Struktur, f rus … Radioelektronikos terminų žodynas
metal-insulator-semiconductor structure — metalo dielektriko puslaidininkio darinys statusas T sritis radioelektronika atitikmenys: angl. metal insulator semiconductor structure vok. Metall Isolator Halbleiter Struktur, f rus. структура металл диэлектрик полупроводник, f pranc. structure … Radioelektronikos terminų žodynas
